power devices

Nurfauzi Abdillah

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials power devices TCAD simulation

Designing power devices that can handle extreme conditions with minimal energy loss, from atomic-scale and device-level simulations to thin-film growth and characterization, to fabricated devices, to enable more efficient grids, electric vehicles, and compact power converters.

GaN-based power devices and power module

Dr. Liu Xinke, Assistant Professor, Shenzhen University

Apr 25, 13:00 - 14:00

B2 L5 R5220

Shenzhen University power devices power module

Gallium nitride (GaN)-based power device, e.g. Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs), have attracted considerable research interest and well recognized as the next generation high power and high temperature devices, owing to their ultralow conduction loss and fast switching under high voltage and high frequency operations.

Ting’ang (挺昂) Liu

Ph.D. Student, Electrical and Computer Engineering

Ultrawide bandgap materials AlN epitaxy power devices